42nm | KitGuru https://www.kitguru.net KitGuru.net - Tech News | Hardware News | Hardware Reviews | IOS | Mobile | Gaming | Graphics Cards Fri, 25 Sep 2015 23:13:49 +0000 en-US hourly 1 https://wordpress.org/?v=6.4.3 https://www.kitguru.net/wp-content/uploads/2021/06/cropped-KITGURU-Light-Background-SQUARE2-32x32.png 42nm | KitGuru https://www.kitguru.net 32 32 Samsung plans to release 4TB SSDs in early 2016 https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-plans-to-release-4tb-ssds-in-early-2016/ https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-plans-to-release-4tb-ssds-in-early-2016/#comments Wed, 23 Sep 2015 01:49:21 +0000 http://www.kitguru.net/?p=268788 Samsung Electronics is working on a new solid-state drive with 4TB capacity. The SSD will be available in early 2016, but its performance and pricing are yet unknown. Samsung 850 Pro solid-state drive with 4TB capacity will be based on the company’s third-generation 48-layer 3D V-NAND memory, reports AnandTech. While exact performance of the Samsung …

The post Samsung plans to release 4TB SSDs in early 2016 first appeared on KitGuru.]]>
Samsung Electronics is working on a new solid-state drive with 4TB capacity. The SSD will be available in early 2016, but its performance and pricing are yet unknown.

Samsung 850 Pro solid-state drive with 4TB capacity will be based on the company’s third-generation 48-layer 3D V-NAND memory, reports AnandTech. While exact performance of the Samsung 850 Pro 4TB SSD is unknown, expect it to be a little lower compared to performance of other drives in the series. Since the SSDs come in 2.5” form-factor and use Serial ATA-6Gb/s interface, the 850 Pro-series solid-state drives are not really performance champions in general.

samsung_4tb_ssd_incoming

Solid-state drives with 4TB capacity will help Samsung to better compete against other makers of SSDs. The unique consumer solid-state drives will be exclusively available only from Samsung for quite a while.

4TB SSDs will provide HDD-class capacity, but expect such devices to be very expensive. Even though NAND flash memory is rather affordable today, 4TB of memory cost a lot of money.

Discuss on our Facebook page, HERE.

KitGuru Says: A 4TB SSD for consumers is clearly a unique product. Nonetheless, do not expect it to be truly fast since it will be based on 48-layer 3D V-NAND, which is slower than the company's second-gen 3D V-NAND memory used on 850 Pro SSDs today.

The post Samsung plans to release 4TB SSDs in early 2016 first appeared on KitGuru.]]>
https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-plans-to-release-4tb-ssds-in-early-2016/feed/ 5
Samsung unveils 950 Pro SSDs with up to 2.5GB/s read speeds https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-unveils-950-pro-ssds-with-up-to-2-5gbs-read-speeds/ https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-unveils-950-pro-ssds-with-up-to-2-5gbs-read-speeds/#respond Tue, 22 Sep 2015 21:05:51 +0000 http://www.kitguru.net/?p=268769 Samsung Electronics has introduced its new family of solid-state drives that offer extreme performance and moderate pricing. The new SSDs come in M.2 form-factor, fully support NVMe protocol and use the company’s second-generation 3D V-NAND flash memory. The Samsung 950 Pro-series solid-state drives are based on the second generation MLC 3D V-NAND 32-layer 128Gb memory …

The post Samsung unveils 950 Pro SSDs with up to 2.5GB/s read speeds first appeared on KitGuru.]]>
Samsung Electronics has introduced its new family of solid-state drives that offer extreme performance and moderate pricing. The new SSDs come in M.2 form-factor, fully support NVMe protocol and use the company’s second-generation 3D V-NAND flash memory.

The Samsung 950 Pro-series solid-state drives are based on the second generation MLC 3D V-NAND 32-layer 128Gb memory chips and the company’s own UBX controller. The drives come in 256GB and 512GB capacities. The 512GB version delivers sequential read/write speeds of up to 2500MB/s and 1500MB/s. Random read performance of the new SSDs is up to 300,000 IOPS, with write speeds of up to 110,000 IOPS. The Samsung 950 Pro SSDs use M.2 2280 form-factor with PCI Express 3.0 x4 interface with NVMe protocol.

The new drives fully support AES 256-bit full disk encryption to protect data and dynamic thermal guard, which can protect the device and data in inclement weather from 0 to 70 degrees Celsius. It can also withstand physical shock of up to 1500G/0.5ms and vibrations up to 20G.

samsung_950_pro_ssd

“With the introduction of the 950 PRO using NVMe and PCIe, Samsung is able to provide our customers with the memory needed to handle the increased storage demands of tomorrow’s computing systems,” said Un-Soo Kim, senior vice president of branded memory at Samsung Electronics. “Consumers and businesses alike can experience enterprise-quality performance and benefits such as speed, endurance and energy efficiency to support the most demanding applications. The 950 Pro is yet another example of a branded memory solution that continues to elevate our portfolio of products and reflects Samsung’s continued leadership in the memory industry.”

The Samsing 950 Pro solid-state drives will be available starting from October 2015, with an MSRP of $199.99 for the 256GB capacity and $349.99 for the 512GB capacity. Both drives are covered with a 5-year limited warranty up to 200 terabytes written (TBW) for the 256GB and 400TBW for the 512GB.

Discuss on our Facebook page, HERE.

KitGuru Says: The Samsung 950 Pro SSDs are not cheap. However, their performance and reliability make them a perfect choice for high-performance desktops and notebooks.

The post Samsung unveils 950 Pro SSDs with up to 2.5GB/s read speeds first appeared on KitGuru.]]>
https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-unveils-950-pro-ssds-with-up-to-2-5gbs-read-speeds/feed/ 0
Samsung’s new SSDs feature up to 6.4TB capacity, up to 5.5GB/s bandwidth https://www.kitguru.net/components/memory/anton-shilov/samsung-unveils-ssds-with-up-to-6-4tb-capacity-up-to-5-5gbs-bandwidth/ https://www.kitguru.net/components/memory/anton-shilov/samsung-unveils-ssds-with-up-to-6-4tb-capacity-up-to-5-5gbs-bandwidth/#comments Wed, 12 Aug 2015 21:59:08 +0000 http://www.kitguru.net/?p=263244 Samsung Electronics has introduced its all-new solid-state drives based on the latest TLC 3D V-NAND flash memory for enterprises. The SSDs provide unprecedented levels of performance, capacity, endurance and reliability, which will help Samsung to address new markets. The new enterprise-class SSDs are based on Samsung’s latest 48-layer 3D V-NAND triple-level-cell (TLC) memory and Samsung’s …

The post Samsung’s new SSDs feature up to 6.4TB capacity, up to 5.5GB/s bandwidth first appeared on KitGuru.]]>
Samsung Electronics has introduced its all-new solid-state drives based on the latest TLC 3D V-NAND flash memory for enterprises. The SSDs provide unprecedented levels of performance, capacity, endurance and reliability, which will help Samsung to address new markets.

The new enterprise-class SSDs are based on Samsung’s latest 48-layer 3D V-NAND triple-level-cell (TLC) memory and Samsung’s proprietary controller and firmware. The new drives support NVMe protocol, protection against power loss as well as other advanced features required by datacentres.

The new flagship Samsung PM1725 enterprise-class solid-state drives come in half-height, half-length (HHHL) card form-factor with PCI Express 3.0 x8 interface with NVMe protocol. The drives can store 3.2TB or 6.4TB of data and provides outstanding reliability with five DWPDs (drive writes per day) for five years, which translates to writing a total of 32TBs per day during that time.

Performance levels of the Samsung PM1725 are also unprecedented: the SSDs can sequentially read data at up to 5500MB/s and write data at up to 1800MB/s. The PM1725 provides a random read speed of up to one million IOPS (input output operations per second) and writes randomly at up to 120 thousand IOPS.

Samsung-PM1725-SSDs-Main

In addition, Samsung introduced PM1633 solid-state drives, which come in 2.5” form-factor and feature serial attached SCSI-12Gb/s (SAS-12Gb/s) interface. The PM1633 delivers random read and write speeds of up to 160 thousand and 18 thousand IOPS respectively, and boasts sequential read and write speeds of up to 1100MB/s and 1000MB/s. The new drives will be available in 480GB, 960GB, 1.92TB and 3.84TB versions.

“We are providing high-end capabilities and capacities for all of our latest SSDs, something we believe will elicit a high degree of interest from OEMs and computer enthusiasts throughout the world,” said Jim Elliott, corporate vice president of Samsung Semiconductor. “We understand the performance needs of our customers in a rapidly expanding SSD universe and are determined to meet those needs.”

Discuss on our Facebook page, HERE.

KitGuru Says: Without any doubts, Samsung’s new PM1725 and PM1633 are nothing, but remarkable. What is even more impressive is that 48-layer TLC 3D V-NAND memory is among the cheapest NAND flash options in the industry. In short, Samsung has just managed to create ultra-premium SSDs using inexpensive NAND.

The post Samsung’s new SSDs feature up to 6.4TB capacity, up to 5.5GB/s bandwidth first appeared on KitGuru.]]>
https://www.kitguru.net/components/memory/anton-shilov/samsung-unveils-ssds-with-up-to-6-4tb-capacity-up-to-5-5gbs-bandwidth/feed/ 14
Samsung begins to produce 48-layer 3D V-NAND flash memory https://www.kitguru.net/components/memory/anton-shilov/samsung-begins-to-produce-48-layer-3d-v-nand-flash-memory/ https://www.kitguru.net/components/memory/anton-shilov/samsung-begins-to-produce-48-layer-3d-v-nand-flash-memory/#comments Tue, 11 Aug 2015 22:59:12 +0000 http://www.kitguru.net/?p=263138 Samsung Electronics on Tuesday said that it had started to mass produce the world’s first triple-level-cell (TLC) three dimensional vertical NAND flash memory chips with 256Gb capacity. The new 3D V-NAND memory ICs [integrated circuits] will help Samsung to make solid-state drives and other flash-based devices more affordable, which will help to increase market share …

The post Samsung begins to produce 48-layer 3D V-NAND flash memory first appeared on KitGuru.]]>
Samsung Electronics on Tuesday said that it had started to mass produce the world’s first triple-level-cell (TLC) three dimensional vertical NAND flash memory chips with 256Gb capacity. The new 3D V-NAND memory ICs [integrated circuits] will help Samsung to make solid-state drives and other flash-based devices more affordable, which will help to increase market share of the company.

The new 256Gb TLC NAND flash memory chips from Samsung utilize the same 3D charge trap flash (CTF) architecture in which the cell arrays are stacked vertically to form a 48-storied mass that is electrically connected through some 1.8 billion channel holes punching through the arrays thanks to a special etching technology. In total, each chip contains over 85.3 billion cells and can store 32GB of data.

According to Samsung, the new 48-layer 256Gb TLC NAND flash memory chip consumes 30 per cent less energy than the predecessor, which has 128Gb capacity. The new chip is also 40 per cent smaller than its ancestor, which means that it costs less to produce.

Samsung_48-layer_256Gb_V-NAND_chip_M

“With the introduction of our 3rd generation V-NAND flash memory to the global market, we can now provide the best advanced memory solutions, with even higher efficiency based on improved performance, power utilization and manufacturing productivity, thereby accelerating growth of the high-performance and the high-density SSD markets,” said Young-Hyun Jun, president of the memory business at Samsung Electronics. “By making full use of Samsung V-NAND’s excellent features, we will expand our premium-level business in the enterprise and data center market segments, as well as in the consumer market, while continuing to strengthen our strategic SSD focus.”

Samsung hopes that its third-generation 3D V-NAND memory enable it to make affordable 1TB and 2TB solid-state drives for consumers. In addition, the company believes that such memory will help to increase its high-density SSD sales for the enterprise and data center storage markets with PCIe NVMe and SAS interfaces.

Discuss on our Facebook page, HERE.

KitGuru Says: Samsung is again ahead of its rivals with its third-generation 3D V-NAND flash memory. It remains to be seen how significantly the company will manage to increase its share on the market of SSDs thanks to its new memory chips. At present the company controls over 40 per cent of the SSD market, according to analysts.

The post Samsung begins to produce 48-layer 3D V-NAND flash memory first appeared on KitGuru.]]>
https://www.kitguru.net/components/memory/anton-shilov/samsung-begins-to-produce-48-layer-3d-v-nand-flash-memory/feed/ 4
Samsung announces 2TB solid-state drives for consumers https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-announces-2tb-solid-state-drives-for-consumers/ https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-announces-2tb-solid-state-drives-for-consumers/#comments Mon, 06 Jul 2015 22:19:03 +0000 http://www.kitguru.net/?p=257692 Solid-state drives have higher performance compared to hard disk drives, but when it comes to storage capacities HDDs are unrivalled. High-capacity SSDs are usually very expensive and are not considered as replacement for hard drives. However, Samsung on Monday introduced its new 850 Evo and 850 Pro solid-state drive that feature 2TB capacity and do …

The post Samsung announces 2TB solid-state drives for consumers first appeared on KitGuru.]]>
Solid-state drives have higher performance compared to hard disk drives, but when it comes to storage capacities HDDs are unrivalled. High-capacity SSDs are usually very expensive and are not considered as replacement for hard drives. However, Samsung on Monday introduced its new 850 Evo and 850 Pro solid-state drive that feature 2TB capacity and do not cost several thousands.

Samsung’s 850 Evo and 850 Pro solid-state drives are the latest families of SSDs from Samsung introduced last year. Up to now maximum storage capacity offered by the drives was 1TB, but from now on the company will also offer versions of the products with 2TB of storage space. The new 2TB 850 SSD Pro and Evo drives remain in the same 7-millimeter, 2.5-inch aluminum case as their predecessors did. The new SSDs are based on Samsung’s proprietary MHX controllers.

“Samsung experienced surge in demand for 500GB and higher capacity SSDs with the introduction of our V-NAND SSDs,” said Un-Soo Kim, senior vice president of branded product marketing of memory business at Samsung Electronics. “The release of the 2TB SSD is a strong driver into the era of multi-terabyte SSD solutions. We will continue to expand our ultra-high performance and large density SSD product portfolio and provide a new computing experience to users around the globe.”

samsung_ssd_tlc_840_evo_1

The Samsung 850 Evo SSDs are based on the company’s triple-level cell (TLC) 3D V-NAND flash memory and are currently the most affordable solid-state drives in the market. Sequential read performance of the 850 Evo is up to 540MB/s, while write performance is claimed to be up to 520MB/s. The drives come with 10-year warranty 300TB to be written.

The Samsung 850 Pro solid-state drives use the second-generation multi-level cell (MLC) 3D V-NAND flash memory with enhanced performance and reliability. Sequential read performance of the 850 Pro reaches up to 550MB/s, while write performance can be up to 520MB/s. Random read performance of the 850 Pro SSDs is up to 100000 input/output operations-per-second (IOPS), with write speeds of up to 90000 IOPS. The drives come with 10-year warranty and 150TB to be written.

The new 2TB drives are available in 50 countries.

Discuss on our Facebook page, HERE.

KitGuru Says: While initially 2TB SSDs will clearly be rather expensive, the fact that Samsung releases them means that there is market demand for such SSD capacities. As a result, the drive will eventually get much more affordable.

The post Samsung announces 2TB solid-state drives for consumers first appeared on KitGuru.]]>
https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-announces-2tb-solid-state-drives-for-consumers/feed/ 3
Chillblast slashes prices of Samsung 850 Evo and 850 Pro SSDs https://www.kitguru.net/components/ssd-drives/anton-shilov/chillblast-slashes-prices-of-samsung-850-evo-and-850-pro-ssds/ https://www.kitguru.net/components/ssd-drives/anton-shilov/chillblast-slashes-prices-of-samsung-850-evo-and-850-pro-ssds/#comments Wed, 10 Jun 2015 00:54:42 +0000 http://www.kitguru.net/?p=253665 Chillblast, a well-known maker of enthusiast-class personal computers from the U.K., offers rather substantial discounts on Samsung Electronics’ 850 Evo and 850 Pro solid-state drives for a limited time. For less than two weeks, Samsung’s latest family of solid-state drives will be available with £10 – £50 discounts at Chillblast. For example, it will be …

The post Chillblast slashes prices of Samsung 850 Evo and 850 Pro SSDs first appeared on KitGuru.]]>
Chillblast, a well-known maker of enthusiast-class personal computers from the U.K., offers rather substantial discounts on Samsung Electronics’ 850 Evo and 850 Pro solid-state drives for a limited time.

For less than two weeks, Samsung’s latest family of solid-state drives will be available with £10 – £50 discounts at Chillblast. For example, it will be possible to get Samsung’s 850 Evo 250GB SSD for £89.99, whereas the model 850 Pro 250GB will cost £119.99. The offer ends on the 19th of June, 2015.

samsung_850_pro_1

The Samsung 850 Evo SSDs are based on the company’s triple-level cell (TLC) 3D V-NAND flash memory and are currently the most affordable solid-state drives in the market. The 850 Evo SSD family includes 120GB, 250GB, 500GB and 1TB models. Sequential read performance of the 850 Evo is up to 540MB/s, while write performance is claimed to be up to 520MB/s.

chillblast_samsung_ssd

The Samsung 850 Pro solid-state drives are the company’s flagship SSD offerings based on the second-generation multi-level cell (MLC) 3D V-NAND flash memory with enhanced performance and reliability. Sequential read performance of the 850 Pro reaches up to 550MB/s, while write performance can be up to 520MB/s. Random read performance of the 850 Pro SSDs is up to 100000 input/output operations-per-second (IOPS), with write speeds of up to 90000 IOPS. The drives are available in 128GB, 256GB, 512GB and 1TB storage capacities.

samsung_850_pr0

See the detailed offering from Chillblast HERE.

Discuss on our Facebook page, HERE.

KitGuru Says: If you are in the market for a high-end or an affordable SSD, then Chillblast’s offering will clearly be interesting for you.

The post Chillblast slashes prices of Samsung 850 Evo and 850 Pro SSDs first appeared on KitGuru.]]>
https://www.kitguru.net/components/ssd-drives/anton-shilov/chillblast-slashes-prices-of-samsung-850-evo-and-850-pro-ssds/feed/ 5
End of planar NAND flash nears as Samsung to focus on 3D V-NAND https://www.kitguru.net/components/memory/anton-shilov/end-of-planar-nand-flash-nears-as-samsung-to-focus-on-3d-v-nand/ https://www.kitguru.net/components/memory/anton-shilov/end-of-planar-nand-flash-nears-as-samsung-to-focus-on-3d-v-nand/#comments Wed, 08 Apr 2015 21:50:48 +0000 http://www.kitguru.net/?p=243992 Samsung Electronics plans to concentrate on expansion of production capacities used to make its 3D V-NAND memory going forward. A media report claims that the South Korean conglomerate no longer plans to build new manufacturing facilities for production of traditional planar NAND flash. NAND flash was invented by Toshiba Corp. in 1984 and while its …

The post End of planar NAND flash nears as Samsung to focus on 3D V-NAND first appeared on KitGuru.]]>
Samsung Electronics plans to concentrate on expansion of production capacities used to make its 3D V-NAND memory going forward. A media report claims that the South Korean conglomerate no longer plans to build new manufacturing facilities for production of traditional planar NAND flash.

NAND flash was invented by Toshiba Corp. in 1984 and while its architecture has been rapidly evolving over the years, its planar structure remained largely unchanged. In the recent years Samsung Electronics introduced vertical NAND, which, while using the same principles as planar NAND, provides a number of benefits. The vertical layers connected using the through-silicon-vias (TSVs) of the 3D V-NAND allow larger areal bit densities without requiring smaller individual cells (hence, eliminating need for ultra-thin manufacturing technologies), which means higher write/erase endurance, general reliability and performance.

samsung_3d_nand_flash

Samsung claims that its 3D V-NAND exhibits at least two times the endurance and writes data (tPROG, program time) at least twice as fast as multi-level-cell (MLC) type planar NAND flash memory made using one of the latest manufacturing processes. Besides, 3D V-NAND is also more energy-efficient than planar NAND memory: it consumes around 40 per cent less of power.

samsung_nand_flash_3d_architecture samsung_nand_flash_3d_architecture_1

Perhaps, what is even more important, 3D NAND allows to rapidly increase capacities of NAND flash chips and solid-state drives, something the industry needs badly. According to predictions by Samsung, total available market for NAND flash memory will grow to 66 billion 1GB equivalent memory chips this year, up from 50 billion of 1GB equivalent memory devices. As a result, it is getting crucial to increase density of NAND flash memory ICs [integrated circuits], something, which 3D NAND technology allows to do relatively easily.

samsung_nand_flash_demand

Samsung’s 3D V-NAND has become mature enough in the recent years and now the company plans to significantly increase production of this type of non-volatile computer storage medium. In fact, BusinessKorea reports that Samsung no longer plans to build new facilities to make planar NAND flash, but to focus solely on expansion of 3D V-NAND.

“Samsung Electronics will not set up a general NAND flash plant any longer, but concentrate on V-NAND from now on,” a source with knowledge of Samsung’s plans is reported to have said.

samsung_nand_flash_roadmap

At present Samsung produces 3D V-NAND memory at one its facilities in Hwaseong, South Korea, as a well as at a dedicated 3D NAND fab in Xi’an, China. The Chinese factory can process around 100 thousand 300mm wafers per month. Eventually the company plans to expand its Xi’an manufacturing complex in a bid to produce 300 thousand 300mm wafers per month, the report claims. Manufacturing capacities used to make 3D NAND memory may not need leading-edge process technologies, but they require specific advanced equipment.

Planar NAND flash memory will continue to be produced and utilized for various applications for many years to come. Even Samsung Electronics itself will likely introduce one or two more manufacturing technologies for making NAND. Moreover, the company will likely upgrade at least some of its current fabs that make planar flash memory to new fabrication processes.

Samsung’s decision to concentrate 3D V-NAND capacities clearly indicates where the market is going. In fact, Samsung is not alone with its focus on 3D NAND. Other makers of flash, including Toshiba/SanDisk, SK Hynix and Micron are also about to start making 3D NAND for the same reasons as Samsung. Moreover, Micron Technology, which began to expand its fab 10N in Singapore in early March, also intends to use its new manufacturing capacities to make second-gen 3D NAND flash memory.

Samsung did not comment on the news-story.

Discuss on our Facebook page, HERE.

KitGuru Says: Given all the advantages that 3D NAND has over planar NAND, it makes a great sense for makers of flash memory to focus on the former instead of the latter. One of the things that needs to be mentioned is that new production facilities are getting more and more expensive. In fact, some analysts believe that 3D NAND technology is more than two times more capital intensive than planar NAND. Therefore, in the long term, those, who want to stay in the business, have to be big and profitable. With $56 billion in its wallet, Samsung can be rather confident about its future.

The post End of planar NAND flash nears as Samsung to focus on 3D V-NAND first appeared on KitGuru.]]>
https://www.kitguru.net/components/memory/anton-shilov/end-of-planar-nand-flash-nears-as-samsung-to-focus-on-3d-v-nand/feed/ 1
Apple to use Samsung’s ultra-fast 3D V-NAND SSDs in its laptops https://www.kitguru.net/lifestyle/mobile/apple/anton-shilov/apple-to-use-samsungs-ultra-fast-3d-v-nand-ssds-in-its-laptops/ https://www.kitguru.net/lifestyle/mobile/apple/anton-shilov/apple-to-use-samsungs-ultra-fast-3d-v-nand-ssds-in-its-laptops/#comments Sat, 14 Mar 2015 13:58:13 +0000 http://www.kitguru.net/?p=240035 In a bid to improve performance and reliability of solid-state drives inside its notebooks, Apple will use SSDs made by Samsung and powered by 3D V-NAND flash memory. This is a major win for Samsung as it gets a major PC maker as a client. The latest MacBook notebooks will get solid-state drives with around …

The post Apple to use Samsung’s ultra-fast 3D V-NAND SSDs in its laptops first appeared on KitGuru.]]>
In a bid to improve performance and reliability of solid-state drives inside its notebooks, Apple will use SSDs made by Samsung and powered by 3D V-NAND flash memory. This is a major win for Samsung as it gets a major PC maker as a client. The latest MacBook notebooks will get solid-state drives with around 2GB/s read speeds, a massive performance increase.

The new MacBook Air and MacBook Pro laptops from Apple use custom M.2 SSDs from Samsung marked as MZ-JPV128R/0A2, according to iFixit. The drives are based on the Samsung S4LN058A01 PCIe 3.0 x4 AHCI controller as well as Samsung K9LDGY8S1D-XCK0 NAND flash memory chips. The same controller and memory ICs power Samsung’s SM951 SSD introduced earlier this year.

apple_macbook_air

Exact specifications of Apple’s custom SSD are unknown. The SM951 can read and write sequentially at up to 2150MB/s and 1550 MB/s respectively. Random read and write speeds of SM951 reach up to 130,000 and 85,000 IOPS (inputs/outputs per second) respectively. Samsung’s SM951 is also used inside PCs from the world’s largest PC maker, Lenovo Group.

Extreme performance amid increased reliability provided by Samsung’s 3D V-NAND memory clearly influenced Apple’s decision to use Samsung’s solid-state drives inside its latest laptops. The agreement between Apple and Samsung is confidential, yet, it probably is worth billions of dollars. Terms of the deal are kept confidential.

“Samsung Electronics recently agreed with Apple to provide SSDs using its latest three-dimensional (3D) V-NAND tech,” a source familiar with the talks told The Korea Times. “The deal is estimated to be worth a ‘few billion dollars’.”

samsung_apple_ssd_3d_v_nand_2

It is highly likely that Samsung’s latest SSDs and appropriate NAND flash memory chips use the second-generation V-NAND flash memory that stacks 32 multi-level cell (MLC) NAND storage layers in one chip package and are made using 42nm fabrication process.

The vertical layers connected using the through-silicon-vias (TSVs) of the 3D V-NAND allow larger areal bit densities without requiring smaller individual cells (hence, no need for ultra-thin manufacturing technology), which generally means higher reliability and performance. Samsung claims that its V-NAND exhibits at least two times the reliability (endurance) and writes data (tPROG, program time) at least twice as fast as multi-level-cell (MLC) type planar NAND flash memory.

samsung_apple_ssd_3d_v_nand_1

Due to competitive advantages of Samsung’s 3D V-NAND, Apple could use the same type of flash memory for other products as well, which will significantly improve their performance.

Apple and Samsung did not comment on the news-story.

Discuss on our Facebook page, HERE.

KitGuru Says: The deal to supply SSDs for MacBooks is a significant one and will likely bring hundreds of millions of dollars in revenue to Samsung this year alone. This is not exactly a good news for Micron Technology, IM Flash and Toshiba/SanDisk, who will commence mass production of 3D NAND memory in 2015 and 2016, respectively. However, if Apple decides to extend usage of 3D V-NAND to other products, this will essentially make Samsung its almost exclusive supplier of flash memory in general. Now this is a bad news for all other manufacturers.

The post Apple to use Samsung’s ultra-fast 3D V-NAND SSDs in its laptops first appeared on KitGuru.]]>
https://www.kitguru.net/lifestyle/mobile/apple/anton-shilov/apple-to-use-samsungs-ultra-fast-3d-v-nand-ssds-in-its-laptops/feed/ 3
Samsung announces 850 Evo SSD with TLC V-NAND flash https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-announces-850-evo-ssd-with-tlc-nand-flash/ https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-announces-850-evo-ssd-with-tlc-nand-flash/#comments Mon, 08 Dec 2014 23:59:30 +0000 http://www.kitguru.net/?p=225408 Samsung Electronics on Monday formally announced its highly anticipated lineup of solid-state drives based on triple-level cell (TLC) vertically integrated NAND flash memory. The Samsung 850 Evo family of SSDs promises to offer high performance at relatively low price-points. The Samsung 850 Evo SSDs line includes 120GB, 250GB, 500GB and 1TB models. Sequential read performance …

The post Samsung announces 850 Evo SSD with TLC V-NAND flash first appeared on KitGuru.]]>
Samsung Electronics on Monday formally announced its highly anticipated lineup of solid-state drives based on triple-level cell (TLC) vertically integrated NAND flash memory. The Samsung 850 Evo family of SSDs promises to offer high performance at relatively low price-points.

The Samsung 850 Evo SSDs line includes 120GB, 250GB, 500GB and 1TB models. Sequential read performance of the 850 Evo is up to 540MB/s, while write performance is claimed to be up to 520MB/s. The new SSDs use Serial ATA-6Gb/s interface and come in 2.5”/7mm form-factor. Next year, Samsung plans to introduce an extended line-up of the 850 Evo in mSATA and M.2 form factors, based on 3-bit V-NAND flash memory

“We are thrilled to be providing users with an improved computing experience through the new 850 EVO SSDs,” said Unsoo Kim, senior vice president of the branded product marketing team at Samsung Electronics. “Samsung will continue to introduce V-NAND-based SSDs in a variety of form factors, while accelerating the growth of the global SSD market.”

samsung_ssd_enterprise_3d_v_nand_1

While the Samsung 850 Pro SSD that launched in July uses 2-bit 3D V-NAND for professional use in high-end client PCs and small- and medium-sized enterprise servers, the 850 Evo is based on 3-bit 3D V-NAND technology. This makes it considerably more affordable and therefore more suitable for general consumer use in devices such as notebook and gaming PCs.

For some reason, Samsung has not announced details about pricing and availability of its 850 Evo SSDs.

Discuss on our Facebook page, HERE.

KitGuru Says: TLC V-NAND promises to be the lowest-cost flash memory. Therefore, Samsung 850 Evo SSDs are expected to be considerably more affordable than other contemporary solid-state drives. It is unknown why Samsung decided to not announce pricing of the new products. One of the reasons for that could be a delay of actual sales.

The post Samsung announces 850 Evo SSD with TLC V-NAND flash first appeared on KitGuru.]]>
https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-announces-850-evo-ssd-with-tlc-nand-flash/feed/ 1
Prices of Samsung 850 Evo SSDs leak: 1TB SSD for $477 https://www.kitguru.net/components/ssd-drives/anton-shilov/prices-of-samsung-850-evo-ssds-leak-1tb-ssd-for-477/ https://www.kitguru.net/components/ssd-drives/anton-shilov/prices-of-samsung-850-evo-ssds-leak-1tb-ssd-for-477/#comments Wed, 29 Oct 2014 20:22:02 +0000 http://www.kitguru.net/?p=219216 Prices of Samsung Electronics’ solid-state drives based on triple-level cell (TLC) 3D V-NAND memory have leaked online. As expected, the new SSDs are among the most affordable in the industry. Performance of the drives based on the most cost-efficient NAND flash memory to date is on par with mainstream solid-state drives by Samsung and other …

The post Prices of Samsung 850 Evo SSDs leak: 1TB SSD for $477 first appeared on KitGuru.]]>
Prices of Samsung Electronics’ solid-state drives based on triple-level cell (TLC) 3D V-NAND memory have leaked online. As expected, the new SSDs are among the most affordable in the industry. Performance of the drives based on the most cost-efficient NAND flash memory to date is on par with mainstream solid-state drives by Samsung and other manufacturers.

The Samsung 850 Evo SSDs will be available in 120GB, 250GB, 500GB and 1TB storage capacities. Sequential read performance of the 850 Evo is expected to be up to 550MB/s, while write performance is projected to be up to 520MB/s, according to a description located at Fry’s Electronics, a major U.S. retail chain that also sells devices online. The new SSDs will use Serial ATA-6Gb/s interface and will come in 2.5”/7mm form-factor.

The most important aspect of the Samsung 850 Evo family is its current pricing. At Fry’s, 1TB version of the 850 Evo SSD is listed at $499, whereas at Antares Pro the same solid-state drive can be pre-ordered for $477. Antares Pro is also taking pre-orders on 120GB, 250GB and 500GB models, which are going to cost $100, $146 and $258, respectively.

samsung_850_pro_1

While the initial prices of the Samsung 850 Evo solid-state drives can be slightly higher when compared to models that have been available on the market for some time now, the fact that the prices are relatively low means that Samsung could eventually further decrease them. Moreover, since Samsung has not formally introduced its 850 Evo family of SSDs, actual recommended prices could become even lower than those listed today.

The Samsung 850 Evo family of solid-state drives is expected to become available in late November.

Samsung did not comment on the news-story.

Discuss on our Facebook page, HERE.

KitGuru Says: This holiday season will be a good time to buy an SSD. Many makers will enter the price-war against each other and Samsung in a bid to sell more drives, therefore, it will be easy to get a fine high-capacity SSD at an affordable price-point.

The post Prices of Samsung 850 Evo SSDs leak: 1TB SSD for $477 first appeared on KitGuru.]]>
https://www.kitguru.net/components/ssd-drives/anton-shilov/prices-of-samsung-850-evo-ssds-leak-1tb-ssd-for-477/feed/ 5
Samsung confirms mass production of TLC 3D V-NAND flash memory https://www.kitguru.net/components/memory/anton-shilov/samsung-confirms-mass-production-of-tlc-3d-v-nand-flash-memory/ https://www.kitguru.net/components/memory/anton-shilov/samsung-confirms-mass-production-of-tlc-3d-v-nand-flash-memory/#respond Thu, 09 Oct 2014 19:49:44 +0000 http://www.kitguru.net/?p=215956 Samsung Electronics on Thursday confirmed that it had begun mass production of triple-layer cell (TLC, or 3-bit-per-cell, 3bpc) three-dimensional vertical NAND (3D V-NAND) flash memory. The company will use the memory for its upcoming solid-state drives that promise to offer decent performance, reliability as well as affordability. Samsung’s first TLC 3D V-NAND flash memory chips …

The post Samsung confirms mass production of TLC 3D V-NAND flash memory first appeared on KitGuru.]]>
Samsung Electronics on Thursday confirmed that it had begun mass production of triple-layer cell (TLC, or 3-bit-per-cell, 3bpc) three-dimensional vertical NAND (3D V-NAND) flash memory. The company will use the memory for its upcoming solid-state drives that promise to offer decent performance, reliability as well as affordability.

Samsung’s first TLC 3D V-NAND flash memory chips have 128Gb capacity and utilize 32 stacked cell layers per memory device. It is unclear which process technology is used to make 3bpc 3D V-NAND memory (it is expected that Samsung continues to use 42nm fabrication process for all 3D V-NAND in general), but the manufacturer claims that compared to its 10nm-class 3-bit planar NAND flash, the new 3-bit V-NAND has more than doubled wafer productivity (which generally means two times lower cost).

Samsung is the first NAND flash maker in the world to introduce TLC 3D V-NAND memory to the market. Both TLC and V-NAND technologies are designed to make flash memory more affordable. Since TLC memory is not as endurable as traditional MLC [multi-level cell, 2-bit-per-cell, 2bpc], many manufacturers continue to be cautious about the type. Samsung is ahead of many since it wedded TLC with V-NAND and is expected to introduce SSDs featuring the new memory chips in the coming months or even weeks.

samsung_nand_flash_memory_3d_v_nand_0140529_06L

The manufacturer has already showcased the world’s first SSD based on TLC 3D V-NAND memory, the Samsung SSD 850 Evo.

“With the addition of a whole new line of high density SSDs that is both performance- and value-driven, we believe the 3-bit V-NAND will accelerate the transition of data storage devices from hard disk drives to SSDs,” said Jaesoo Han, Senior Vice President, Memory Sales & Marketing, Samsung Electronics. “The wider variety of SSDs will increase our product competitiveness as we further expand our rapidly growing SSD business.”

Discuss on our Facebook page, HERE.

KitGuru Says: Samsung continues to be ahead of its rivals when it comes to evolution of NAND flash memory. If TLC 3D V-NAND proves to be inexpensive, rapid, reliable and durable at the same time, then Samsung will be able to offer quality SSDs that will be priced well below those from its rivals.

The post Samsung confirms mass production of TLC 3D V-NAND flash memory first appeared on KitGuru.]]>
https://www.kitguru.net/components/memory/anton-shilov/samsung-confirms-mass-production-of-tlc-3d-v-nand-flash-memory/feed/ 0
Samsung readies ‘SSD for everyone’ based on TLC 3D V-NAND memory https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-readies-ssd-for-everyone-based-on-tlc-3d-v-nand-memory/ https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-readies-ssd-for-everyone-based-on-tlc-3d-v-nand-memory/#comments Wed, 10 Sep 2014 04:40:26 +0000 http://www.kitguru.net/?p=210972 It is not a secret that Samsung Electronics has plans to manufacture triple-level-cell (TLC) 3D V-NAND flash memory and even build solid-state drives on its base. What is surprising is that such memory is not only already in production, but that the company is already preparing an SSD family based on three-bit 3D V-NAND. At …

The post Samsung readies ‘SSD for everyone’ based on TLC 3D V-NAND memory first appeared on KitGuru.]]>
It is not a secret that Samsung Electronics has plans to manufacture triple-level-cell (TLC) 3D V-NAND flash memory and even build solid-state drives on its base. What is surprising is that such memory is not only already in production, but that the company is already preparing an SSD family based on three-bit 3D V-NAND.

At the IFA 2014 trade-show in Berlin, Germany, Samsung demonstrated a prototype of a solid-state drive based on the NAND flash memory that combines relatively low manufacturing cost with high performance and high endurance, according to Les Numeriques. No exact details about the upcoming Samsung 850 Evo SSDs are known, but it is clear that they will be available in 2.5” form-factor and with Serial ATA-6Gb/s interface.

samsung-850-evo-hq

Manufacturers of NAND flash are always looking for ways to increase bit density of their memory amid growing demand for solid-state storage and necessity to lower price of NAND flash. One of the ways to boost bit density is to increase the amount of bits stored by every NAND flash cell to three bits (up from two bits in case of MLC), which greatly decreases write endurance of memory. Another way is to make NAND flash using thinner manufacturing technology, which also lowers write endurance. When both methods are combined, write endurance of memory gets dramatically low.

Yet another way to boost bit density is to stack numerous layers of NAND flash vertically; this type of memory is called 3D V-NAND. Samsung uses 42nm process technology to make 3D V-NAND, which greatly increases its endurance compared to planar NAND flash made using 10nm- or 20nm-class process technologies. Moreover, performance of stacked NAND flash is pretty high too.

Given the fact that Samsung is already demonstrating its 850 Evo SSDs at a trade-show, it is highly likely that they will reach the market in the foreseeable future, a good news for those, who plan to get an affordable SSD for Christmas.

Discuss on our Facebook page, HERE.

KitGuru Says: Actual pricing of the Samsung 850 Evo SSDs remains to be seen, but given that the manufacturing costs of TLC NAND are pretty low, it is highly likely that the novelty will become another best-seller for Samsung…

The post Samsung readies ‘SSD for everyone’ based on TLC 3D V-NAND memory first appeared on KitGuru.]]>
https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-readies-ssd-for-everyone-based-on-tlc-3d-v-nand-memory/feed/ 2
Samsung to make TLC 3D V-NAND flash memory https://www.kitguru.net/components/memory/anton-shilov/samsung-to-make-tlc-3d-v-nand-flash-memory/ https://www.kitguru.net/components/memory/anton-shilov/samsung-to-make-tlc-3d-v-nand-flash-memory/#respond Tue, 08 Jul 2014 22:56:59 +0000 http://www.kitguru.net/?p=202149 Samsung Electronics plans to wed triple-level cell NAND flash technology with vertical stacking of NAND flash memory. The new type of NAND will be very cost-efficient to manufacture, which will help Samsung to decrease pricing of its solid-state storage solutions, such as memory cards, storage modules, solid-state drives and so on. Manufacturers of NAND flash …

The post Samsung to make TLC 3D V-NAND flash memory first appeared on KitGuru.]]>
Samsung Electronics plans to wed triple-level cell NAND flash technology with vertical stacking of NAND flash memory. The new type of NAND will be very cost-efficient to manufacture, which will help Samsung to decrease pricing of its solid-state storage solutions, such as memory cards, storage modules, solid-state drives and so on.

Manufacturers of NAND flash are always looking for ways to increase bit density of their memory amid growing demand for solid-state storage. One of the ways to boost bit density is to increase the amount of bits stored by every NAND flash cell, but that decreases write endurance of memory. At present NAND makers can cram up to three bits into one cell; such memory type is called triple-level cell (TLC) NAND. Another way is to stack numerous layers of NAND flash vertically; this type of memory is called 3D V-NAND. The latter is usually faster and provides better write endurance than planar NAND flash made using 10nm- or 20nm-class process technologies.

While there are no technical problems of uniting the TLC and the 3D V-NAND technologies, no memory maker has so far revealed such plans. However, last week during the Q&A session of its SSD Global Summit in Seoul, South Korea, Samsung unveiled that it planned to make an announcement related to three-bit 3D V-NAND, claims the TechReport.

samsung_nand_flash_memory_3d_v_nand_0140529_06L

Samsung did not say when it plans to wed the TLC and the 3D V-NAND technologies. Previously it was expected that Samsung will increase the number of layers within its 3D V-NAND chips from 24 or 32 today to 48 in late 2015 – 2016. However, it looks like the company plans to become even more aggressive and release TLC V-NAND in the coming years as well.

Keeping in mind that Samsung is the only maker of 3D V-NAND memory at present and its rivals are not going to start to produce 32-layer NAND flash memory for quite some time, it is unclear why the South Korean maker needs TLC 3D V-NAND. While such memory is rather complex to produce, it may improve performance and write endurance of traditional TLC since stacked NAND is not made using the latest and thinnest process technologies.

Discuss on our Facebook page, HERE.

KitGuru Says: The main question now is when Samsung plans to roll-out its TLC 3D V-NAND memory. If such memory is indeed scheduled to arrive within one year from now, then the company will have an ultimate weapon against its rivals…

The post Samsung to make TLC 3D V-NAND flash memory first appeared on KitGuru.]]>
https://www.kitguru.net/components/memory/anton-shilov/samsung-to-make-tlc-3d-v-nand-flash-memory/feed/ 0
Samsung reveals new flagship SSD based on 3D V-NAND memory https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-reveals-new-flagship-ssd-based-on-3d-v-nand-memory/ https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-reveals-new-flagship-ssd-based-on-3d-v-nand-memory/#respond Tue, 01 Jul 2014 22:57:24 +0000 http://www.kitguru.net/?p=201083 Samsung Electronics on Tuesday unveiled its new flagship solid-state drive for high-performance desktops that is based on the company’s 3D V-NAND memory. The manufacturer claims that the new 850 Pro-series SSDs offer the highest level of performance among solid-state drives that use the SATA III (6Gb/s) interface. The Samsung 850 Pro will be available in …

The post Samsung reveals new flagship SSD based on 3D V-NAND memory first appeared on KitGuru.]]>
Samsung Electronics on Tuesday unveiled its new flagship solid-state drive for high-performance desktops that is based on the company’s 3D V-NAND memory. The manufacturer claims that the new 850 Pro-series SSDs offer the highest level of performance among solid-state drives that use the SATA III (6Gb/s) interface.

The Samsung 850 Pro will be available in 128GB, 256GB, 512GB and 1TB storage capacities. Sequential read performance of the 850 Pro reaches up to 550MB/s, while write performance can be up to 520MB/s. Random read performance of the new SSDs is up to 100000 input/output operations-per-second (IOPS), with write speeds of up to 90000 IOPS. Traditionally, Samsung’s SSDs featuring 3D V-NAND flash memory are powered by the company’s proprietary SSD controllers. The drives feature Dynamic Thermal Guard technology, which maintains ambient temperature while operating and prevents potential data loss from overheating.

samsung_850_pr0

The vertical layers connected using the through-silicon-vias (TSVs) of the 3D V-NAND allow larger areal bit densities without requiring smaller individual cells (hence, no need for ultra-thin manufacturing technology), which generally means higher reliability and performance. Samsung claims that its V-NAND exhibits at least two times the reliability (endurance) and writes data (tPROG, program time) at least twice as fast as multi-level-cell (MLC) type planar NAND flash memory. Samsung did not reveal whether the 850 Pro SSDs are based on the first-gen or second-gen 3D V-NAND. It is more likely that the new SSDs are powered by the 32-layer second-generation V-NAND flash memory. Samsung uses its 42nm process technology for production of the 2nd-gen V-NAND.

“With the new 850 PRO V-NAND SSD, Samsung is introducing the next major evolution of SSD technology, taking the lead in delivering high-density SSDs with outstanding endurance, performance and energy efficiency,” said Unsoo Kim, senior vice president of branded product marketing team at Samsung Electronics. “We are fully committed to establishing an innovative computing environment by providing customers with leading-edge V-NAND SSDs with unrivaled performance.”

samsung_850_pro_1

Samsung 850 Pro SSDs will be available globally across 53 markets from this month.

Discuss on our Facebook page, HERE.

KitGuru Says: Samsung is again ahead of its rivals with adoption of the 3D V-NAND technology. The new flagship SSDs will not only offer very high performance and reliability, but will also not cost a lot compared to many other high-end solid-state drives.

The post Samsung reveals new flagship SSD based on 3D V-NAND memory first appeared on KitGuru.]]>
https://www.kitguru.net/components/ssd-drives/anton-shilov/samsung-reveals-new-flagship-ssd-based-on-3d-v-nand-memory/feed/ 0
Samsung begins mass production of 32-layer 3D V-NAND memory https://www.kitguru.net/components/memory/anton-shilov/samsung-begins-mass-production-of-32-layer-3d-v-nand-memory/ https://www.kitguru.net/components/memory/anton-shilov/samsung-begins-mass-production-of-32-layer-3d-v-nand-memory/#comments Fri, 30 May 2014 14:33:25 +0000 http://www.kitguru.net/?p=195939 Samsung Electronics on Thursday said it had begun mass production of its second-generation three-dimensional (3D) V-NAND flash memory. The new memory is projected to be more cost-efficient that the previous-gen 3D V-NAND thanks to higher integration. The company also unveiled its new series of solid-state drives that are based on the new memory. The second-generation …

The post Samsung begins mass production of 32-layer 3D V-NAND memory first appeared on KitGuru.]]>
Samsung Electronics on Thursday said it had begun mass production of its second-generation three-dimensional (3D) V-NAND flash memory. The new memory is projected to be more cost-efficient that the previous-gen 3D V-NAND thanks to higher integration. The company also unveiled its new series of solid-state drives that are based on the new memory.

The second-generation V-NAND flash memory from Samsung stacks 32 multi-level cell (MLC) NAND storage layers in one chip package, up from 24 layers in the first-generation V-NAND from the company. Samsung did not reveal capacity of the new chips; the first-gen V-NAND chips provided 128Gb of storage space. Samsung continues to use its 42nm process technology for production of the 2nd-gen V-NAND.

Samsung indicated that the 32-layer 3D V-NAND requires a higher level of design technology to stack the cell arrays than the previous 24-layer V-NAND. According to the manufacturer, the second-gen 32-layer V-NAND is more “production efficient” and is made using “essentially the same” production equipment that was used for making the first gen V-NAND.

samsung_nand_flash_memory_3d_v_nand_0140529_06L
The vertical layers connected using the through-silicon-vias (TSVs) of the 3D V-NAND allow larger areal bit densities without requiring smaller individual cells (hence, no need for ultra-thin manufacturing technology), which generally means higher reliability and performance. Samsung claims that its V-NAND exhibits at least two times the reliability (endurance) and writes data (tPROG, program time) at least twice as fast as multi-level-cell (MLC) type planar NAND flash memory.

Samsung also announced on Thursday a new series of solid-state drives based on the 2nd generation V-NAND flash memory. The new V-NAND SSD lineup for high-end PCs includes models with 128GB, 256GB, 512GB and 1TB capacities. Pricing of the drives as well as their exact specifications (keeping in mind that the drives use Serial ATA-6Gb/s interface, do not expect them to offer breakthrough performance) were not revealed. Later this year the company plans to introduce additional premium 3D NAND-based SSDs

samsung_nand_flash_memory_3d_v_nand_ssd

“We increased the availability of our 3D V-NAND by introducing an extensive V-NAND SSD line-up that covers the PC market in addition to data centers,” said Young-Hyun Jun, executive vice president, memory sales and marketing at Samsung Electronics. “Look for us to provide a consistent, timely supply of high-performance, high-density V-NAND SSDs as well as core V-NAND chips for IT customers globally, contributing to fast market adoption of 3D NAND technology.”

According to a recent research report by Gartner, the global memory market is expected to grow from $75.5 billion in revenues to approximately $79.7 billion in 2017, while its NAND flash portion will continue to rapidly increase to reach a more than 50 percent share or about $44.6 billion in 2017.

Discuss on our Facebook page, HERE.

KitGuru Says: It is simply remarkable that Samsung begins to mass produce the second-generation 3D V-NAND flash memory when its rivals from other companies have not begun to even sample their vertical-NAND flash solutions.

The post Samsung begins mass production of 32-layer 3D V-NAND memory first appeared on KitGuru.]]>
https://www.kitguru.net/components/memory/anton-shilov/samsung-begins-mass-production-of-32-layer-3d-v-nand-memory/feed/ 1