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Samsung recently announced that they have developed the worlds first 12-layer 3D-TSV (Through Silicon Via) technology DRAM modules with up to 24GB capacity, one of the first products to use the technology will be Samsung’s very own HBM2 KGSDs. Samsung’s new 12-layer 3D-TSV process features 12 DRAM chips interconnected through …
Read More »Samsung Develops Industry’s First 12-Layer 3D-TSV DRAM Packaging Technology
