Tag Archives: 280-layer 3D QLC NAND

Samsung and SK Hynix have much to show at the IEEE Solid State Circuit Conference (SSCC). The event, which is scheduled to run from February 18th to the 22nd in San Francisco, will see both companies showing their upcoming memory products, including GDDR7 memory, 16-layer HBM3E stacks, faster LPDDR5T and …

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