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Tag Archives: gate-all-around FET

Samsung: 10nm technology in development, 7nm will require new transistors

Kinam Kim, the president of Samsung Electronics’ semiconductor business, presented his view on the development of chip manufacturing technologies at the International Solid-State Circuits Conference 2015 this week. Samsung is already developing its next-generation 10nm FinFET fabrication process, but in order to continue scaling down structures of chips, new materials …

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