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Samsung announce first DDR4 module – 2.133Gbit at 1.2 volts

Samsung have just announced the completed development of the first DDR4 dynamic ram module, which offers twice the performance of today’s DDR3 DRAM and manages to lower power consumption by 40% when used in a notebook environment.

Samsung said today that the development was completed last month, using 30 nm class lithography, the smallest circuitry technology to date. They are quoting performance speeds up to 3.2Gbit/sec compared with todays DDR3 speeds of 1.6GBit/sec.

In other news, DRAM pricing is still dropping, with a 2GB DDR3 DRAM module available in the US for only $21, a 50 percent price drop in a six month time period.

“The new DDR4 DRAM will build even greater confidence in our cutting-edge green memory, particularly when we introduce four-gigabit DDR4-based products using next-generation process technology for mainstream application,” said Dong Soo Jun, president of Samsung’s memory division.

These new DDR5 modules can achieve data transfer rates of 2.133Gbit at 1.2 volts compared with 1.35 volts and 1.5 volts with the current DDR3 technology.

Samsung are proud to say that power consumption in laptops has dropped by 40 percent with the new memory. Exactly when this will roll out, isn’t yet clear, but it is some way from reaching the mass public.

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