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Tag Archives: Argon Fluoride Immersion Lithography

Samsung begins mass production of 10nm-class DRAM

Samsung has become the first company to begin mass producing 10nm-class DRAM, using a new process known as argon fluoride immersion lithography, which takes over from the previous extreme ultraviolet process. Samsung will be releasing 8GB DDR4 RAM using these new chips, which offer improved data rates and power efficiency …

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