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The latest drive to join Samsung's family of SSDs is the SSD990 EVO Plus, a Gen 4 x4 drive with a DRAM-less design that can also run at Gen 5.0 x2 speeds.
At the time of writing this review, the SSD990 EVO Plus drive range consists of three capacities; 1TB, 2TB (the drive we are looking at here) and a flagship 4TB model. At the heart of the SSD990 EVO Plus is an in-house Samsung Piccolo controller which is a four-channel DRAM-less design using HMB (Host Memory Buffer) technology instead of a dedicated DRAM chip. For the EVO Plus the controller looks after Samsung's own eighth generation 236 Layer V-NAND TLC Flash.
Samsung rates the Sequential read performance of the range as up to 7,150MB/s for the 1TB drive while the 2TB and 4TB drives are up to 7,250MB/s. Sequential write performance is the same up to 6,300MB/s for all three models. Random performance is quoted as up to 850,000 IOPS and 1,350,000 IOPS for read and writes respectively for the 1TB drive, 1,000,000 IOPS and 1,350,000 IOPS for the 2TB drive and up to 1,050,00 IOPS for reads and up to 1,400,000 IOPS for writes for the 4TB drive.
Power consumption for the 2TB model is quoted as 4.6W and 4.2W for average active reads and writes respectively. The TBW endurance figure for the 2TB drive is 1,200TB and Samsung backs the drive with a 5-year warranty.
Physical Specifications:
Usable Capacities: 2TB.
NAND Components: Samsung 236 Layer V-NAND.
NAND Controller: Samsung Piccolo.
Cache: N/A, HMB technology.
Interface: PCIe Gen 4 x4 / Gen 5 x2, NVMe 2.0.
Form Factor: M.2 2280.
Dimensions: 80.15 x 22.15 x 2.38mm.
Drive Weight: 9g.
Firmware Version: 1B2QKXG7.
