Samsung has announced its 3rd generation HBM2E “Flashbolt” memory this week. The latest generation of High Bandwidth Memory 2 is designed to maximise computing performance for HPC systems and assist manufacturers to advance their supercomputer designs. Samsung’s new “Flashbolt” HBM2E will provide double the capacity of the previous generation 8GB …
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The introduction of GDDR6 has significantly closed the gap in memory standards, resulting in Samsung revising its high-bandwidth HBM2 architecture. Introducing HBM2E at Nvidia's GPU Technology Conference (GTC) earlier this week, the manufacturer promises up to 33 percent faster speeds and larger memory buffers while targeting artificial intelligence. Samsung dubbed …
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