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Tag Archives: vertical nand

Toshiba, SanDisk unveil 256Gb 48-layer BiCS NAND flash memory chip

Toshiba Corp. and SanDisk Corp. have formally introduced their first vertically stacked triple-level-cell (TLC) NAND flash memory IC [integrated circuit] with 256Gb capacity. The new 3D BiCS [bit cost scalable] NAND flash memory will be mass produced next year. Toshiba’s new 256Gb (32GB) 48-layer BiCS flash device features 3-bit-per-cell TLC (triple-level cell) …

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Toshiba’s 48-layer BiCS 3D NAND enables fast and reliable SSDs

Toshiba Corp. and SanDisk Corp. this week said that they have finished development of vertically-stacked 3D NAND memory devices. The BiCS [bit cost scalable] NAND flash memory from the two companies will be mass-produced in 2016 and will enable new solid-state storage devices with enhanced reliability and performance. Toshiba’s three-dimensional …

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