Samsung Electronics has begun to produce 8Gb DDR4 memory chips. The new memory devices will power 32GB DDR4 modules and open the doors to 128GB DDR4 memory modules for high-end enterprise-class servers. The 8Gb DDR4 ICs are produced using 20nm fabrication process.

Samsung’s 8Gb DDR4 memory chip can operate at up to 2400MHz effective clock-rate with 1.2V voltage, thus providing unprecedented performance at the lowest possible voltage today. The new 8Gb DDR4 memory IC complements Samsung’s 4Gb DDR4 memory devices that have been in mass production for some time now.

Based on the new 8Gb DDR4 chip, Samsung began producing the 32GB registered dual in-line memory module (RDIMM) earlier this month. The module operates at 2400MHz, a 29 per cent improvement over premium server-class DDR3 modules that operate at 1866MHz.

The new 8Gb memory devices will allow production of server modules with a maximum capacity of 128GB by applying 3D through silicon via (TSV) technology, which will enable a new class of high-end servers with unprecedented amount of memory.

“Our new 20nm 8Gb DDR4 DRAM more than meets the high performance, high density and energy efficiency needs that are driving the proliferation of next-generation enterprise servers,” said Jeeho Baek, vice president of memory marketing at Samsung Electronics. “By expanding the production of our 20nm DRAM line-ups, we will provide premium, high-density DRAM products, while handling increasing demand from customers in the global premium enterprise market.”

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KitGuru Says: Samsung is the first DRAM maker to start producing high-density DDR4 memory chips using leading-edge 20nm process technology. It is unclear when its rivals be able to offer similar memory chips.

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