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SK Hynix to speed up its DDR4 memory chips this year

SK Hynix plans to introduce new versions of its DDR4 dynamic random access memory chips capable of operating at higher clock-rates compared to those available today. The new chips will boost performance of high-end and performance-mainstream PCs in the second half of this year.

Nowadays SK Hynix, Samsung Electronics and Micron Technology offer DDR4 DRAM memory chips that can operate at effective clock-rates up to 2400MHz (2.40GHz). Manufacturers of high-performance DIMMs for enthusiasts have to use special printed circuit boards along with hand-picked memory chips to build memory modules capable of operating at 3.0GHz or 3.40GHz.

Starting from the second quarter of 2015, SK Hynix will sample DDR4 memory ICs [integrated circuits] officially capable of operating at 2666MHz, according to a document seen by KitGuru. The chips will feature CL17 17-17 latency settings at 2.66GHz clock-rate, 4Gb density, 512Mx8 or 256Mx16 organization, 78-ball or 96-ball packaging and will require 1.2V VDD voltage.

sanmax_sk_hynix_ddr4_memory_module_8gb

At present it is unclear when SK Hynix plans to start mass production of its 2666MHz DDR4 DRAM ICs, but it is likely that this will happen in the second half of this year.

The new high-speed DRAMs will be used for memory modules that will work at 2.66GHz, 3.0GHz, 3.40GHz and beyond.

SK Hynix did not comment on the news-story.

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KitGuru Says: It is a bid surprising that at present SK Hynix does not plan to release DDR4 ICs with clock-rate higher than 2666MHz. Perhaps, the company will add them into its 2015 roadmap at a later date, but so far overclocking prospects of DDR4 memory sub-systems do not look exactly good.

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