Micron produces a variety of memory, whether it is for mobile devices, gaming desktops or industrial grade microSD cards. Now the company is looking to step up its production of the next generation of 3D NAND memory – which includes replacement gate (RG) technology and up to 128 layers.
The reports are based on a Micron’s “Fiscal Q2 2020 Earnings Call Prepared Remarks“. Micron is looking to start volume production during the 3rd quarter of 2020 and be able to start shipping the products by the 4th quarter of this year. ‘Replacement Gate’ is a technology developed by Micron and marks a step forward in the company’s manufacturing technology.
Image credit: AnandTech
Floating gate technology is what Micron and other companies have used previously, and the shift to the new ‘RP’ technology is taken with the aim to “reduce die sizes, lower costs, improve performance, and enable easier transition to next-generation nodes presumably with more active layers.”, AnandTech reports.
In short, Micron is looking to start upping its game when it comes to manufacturing technology. The shift in technology has already started and will hopefully bring better and cheaper products to consumers in the not too distant future.
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