Tag Archives: TSV

The memory market is heating up this year with companies like SK Hynix, TeamGroup and Adata all unveiling upcoming DDR5 memory modules for release later this year. Now, Samsung is joining the club, announcing the industry's first 512GB DDR5 module.  Samsung has announced the first HKMG-based DDR5 memory, aimed at …

As developers of graphics processing units start to use high-bandwidth memory (HBM), manufacturers of graphics cards cease their ability to buy memory directly from DRAM makers. A good news is that Nvidia Corp. intends to buy second-gen HBM from two suppliers, which potentially means flexible pricing. Nowadays manufacturers of graphics …

Advanced Micro Devices is currently the only company to use high-bandwidth memory it co-developed with SK Hynix and other partners. While usage of HBM is clearly a competitive advantage that AMD has over its rivals, the company is encouraging others to use the new memory type and does not intend …

The high-bandwidth memory (HBM) introduced along with AMD’s code-named “Fiji” graphics processing unit radically changes the way graphics adapters are built and also dramatically improves potential performance of future graphics processing units. But while HBM looks ingeniously simple on paper, it was extremely hard to develop and is not easy …

Toshiba Corp. on Thursday introduced the world’s first NAND flash memory packages, which stack eight or 16 dies of NAND flash memory devices and feature 128GB or 256GB capacities. The NAND flash memory chips are designed for various applications that require high density of NAND flash storage, including mobile products …

SK Hynix has begun to produce 3D NAND flash memory, which will be used for solid-state drives later this year. The vertically-stacked NAND flash memory from SK Hynix will improve performance and reliability of the company’s solid-state drives. The 3D NAND memory device that SK Hynix produces in volume features …

At present solid-state drives with extreme capacities are very expensive and even the best of them cannot match high-capacity hard disk drives for nearline storage applications. However, thanks to the evolution of NAND flash memory in general, and 3D vertical NAND (3D V-NAND) in particular, the situation may change soon …

Samsung Electronics on Tuesday said that has started to produce 64GB DDR4 memory modules that are powered by DDR4 memory chips that feature three dimensional (3D) “through silicon via” (TSV) package technology. The DRAM [dynamic random access memory] modules are designed for enterprise servers. Samsung’s 64GB registered dual inline memory …