G.Skill, one of the leading makers of advanced memory modules, on Tuesday rolled-out its highest-performing DDR4 memory kit. The 16GB quad-channel set of memory modules can operate at whopping 3.66GHz and deliver incredible levels of performance in games and demanding applications. G.Skill’s Ripjaws 4 series DDR4 3666MHz memory kit consists of …

Kingston Memory has introduced the world’s fastest 128GB DDR4 quad-channel memory kit that is rated to run at 3.0GHz. The kit is designed for high-end workstations based on Intel Corp.’s Core i7-5960X central processing unit. The kit consists of eight 16GB HyperX Predator modules that can run at 3000MHz with …

EVGA Corp. has quietly started to sell its own-brand memory modules in the U.S. The modules are designed for enthusiast-class personal computers, but do not offer extreme performance like DIMMs from traditional suppliers of high-end memory. Since the new products are not available widely, it looks like the company is …

Samsung Electronics plans to invest additional $9.2 billion in capacity expansion of the world’s largest semiconductor fab, a media report claims. At present it is unclear how exactly Samsung plans to expand its fab, but the cost of the whole project – around $23.6 billion – already looks staggering. Samsung …

When it comes to high-end memory modules for enthusiasts, there is always a trade-off between their clock-rates and capacities. It is not easy to overclock DIMMs powered by multiple memory ICs [integrated circuits], which is why it is complicated to install a lot of fast memory. However, G.Skill on Thursday …

The multi-threaded performance of Haswell-E processors makes them ideal for home users with demanding workloads. Video editors, game streamers, and users running virtual machines are some of the audiences who may benefit from up to eight CPU cores running on the Haswell microarchitecture. Those demanding workloads can bring with them …

Samsung Electronics plans to concentrate on expansion of production capacities used to make its 3D V-NAND memory going forward. A media report claims that the South Korean conglomerate no longer plans to build new manufacturing facilities for production of traditional planar NAND flash. NAND flash was invented by Toshiba Corp. …

Samsung Electronics overwhelmed the world of semiconductors when it announced plans to build a chip production plant that will cost almost $15 billion last October. At the time it was unclear for what the giant plans to use its fab in Pyeongtaek, a city south of Seoul. According to a …

SanDisk is one of the leading producers of NAND flash-based devices, could be an excellent acquisition target for Seagate and Western Digital, according to a financial analyst. While at present the takeover of SanDisk is a hypothetical thing, HDD makers may be very interested in acquiring a company with NAND …

Micron Technology said this week that it had already begun trial production of dynamic random access memory (DRAM) chips using its 10nm-class fabrication process. The manufacturing technology is still under development, but trial production indicates that it is proceeding as planned. “1x nanometer DRAM development is also proceeding well and …

Micron Technology has announced that it will reduce shipments of its NAND flash memory to the spot market. While the move may have limited effects on the market initially, it could lead to consolidation of makers of NAND flash-based devices, including solid-state drives. In a bid to improve its profit …

SK Hynix is about to announce new multi-level cell (MLC) NAND flash memory chips that are expected to boost performance of solid-state drives in various applications. The new chips also promise better reliability than previous-generation NAND flash ICs [integrated circuits]. The world’s third largest producer of NAND flash memory is …

Toshiba Corp. and SanDisk Corp. this week said that they have finished development of vertically-stacked 3D NAND memory devices. The BiCS [bit cost scalable] NAND flash memory from the two companies will be mass-produced in 2016 and will enable new solid-state storage devices with enhanced reliability and performance. Toshiba’s three-dimensional …

Triple-level cell (TLC) NAND flash memory is dramatically less durable than traditional multi-level cell (MLC) or single-level cell (SLC) NAND. However, it has one distinctive advantage over competing technologies: it is more affordable to manufacture. This single advantage drives its popularity among makers of various devices and by the end …

SK Hynix, the world’s second largest producer of dynamic random access memory, said this week that it would begin to mass-produce DRAM using 20nm fabrication process in the second half of the year. The new manufacturing technology will help the company to better address the needs of the high-end memory …

SK Hynix has demonstrated a wafer with second-generation high-bandwidth memory (HBM) at the CeBIT trade-show in Hannover, Germany. The new memory chips will emerge on the market sometimes next year and will increase memory bandwidth and memory capacities for graphics cards and other applications. The first-generation HBM (HBM1) stacks four …

Micron Technology on Monday began the expansion of its Singapore NAND flash memory fabrication facility. The company started to build a new fab that will cost $4 billion and will start production in fiscal 2017. The new fab is expected to produce innovative 3D NAND flash (co-developed with Intel) as …

Samsung Electronics this week said that it had started to mass produce a family of NAND flash memory devices for mobile applications that are compliant with the Universal Flash Storage (UFS) 2.0 standard. The new chips will be used for smartphones and tablets and will enable SSD-class performance on mobile …

Even though Samsung Electronics plans to increase its manufacturing capacities for dynamic random access memory later this year, analysts believe that this will not create an oversupply on the DRAM market. The reasons for that are transitions to bigger memory dies as well as growing demand for higher memory capacities …

Corsair, a major maker of enthusiast-class memory modules, has introduced its new limited edition 16GB DDR4 memory kit designed for high-end desktop (HEDT) systems featuring Intel Core i7 “Haswell-E” processors and Gigabyte X99-SOC Champion mainboards. The memory will run at maximum DDR4 clock-rate possible today, 3.40GHz, and will provide further …

Samsung Electronics will lead the market of dynamic random access memory with transition to 20nm fabrication process, a media report citing sources with knowledge of the matter claims. Over half of the company’s DRAM this year will be made using 20nm manufacturing technology. Demand for higher-performance and higher-density computer memory …

Samsung Electronics this week introduced the world’s first NAND flash storage chips that comply with the eMMC 5.1 specification. The new solutions will significantly improve performance of embedded storage inside mobile devices, such as smartphones and tablets. The eMMC 5.1 storage devices from Samsung are offered in 16GB, 32GB and …

The 5820K has shown that a strong boost in CPU performance can be obtained for a reasonable price increase over the LGA 1150 Core i7 CPUs. And many of the X99 motherboards sit well below £200, making them affordable to enthusiast buyers. But where that entire value logic of Intel's …

SK Hynix plans to introduce new versions of its DDR4 dynamic random access memory chips capable of operating at higher clock-rates compared to those available today. The new chips will boost performance of high-end and performance-mainstream PCs in the second half of this year. Nowadays SK Hynix, Samsung Electronics and …

SK Hynix has notified its partners regarding availability of its high-capacity DDR4 memory modules for servers. A good news is that the company will improve performance of such memory solutions, however, a not very good news is that the firm will delay mass production of its flagship 128GB LRDIMM by …

SK Hynix has announced that its 8Gb LPDDDR4 memory, which is in mass production now, has been chosen by a major smartphone maker for a new flagship model. The forthcoming handset will be among the first phones to use the new type of memory. SK Hynix’s 8Gb LPDDR4 memory chips …

Toshiba Corp. and SK Hynix on Thursday signed a formal agreement under which the two companies will jointly develop a nanoimprint lithography (NIL) process technology. The two producers of chips and computer memory plan to start using NIL technology in 2017. The companies believe that the tech will allow them …

Samsung Electronics on Wednesday introduced the industry’s first memory solution that integrates dynamic random access memory (DRAM) and NAND flash into one package. The new package will help Samsung and its customers to make smartphones thinner and more cost efficient. The new ePoP (embedded package on package) memory package consists …

Rambus has announced that it is working on a new dynamic random access memory (DRAM) architecture that will shrink latencies and increase capacities of computer memory chips. The company did not reveal many details on the matter, but indicated that at least two major producers of DRAM are interested in …

A leading professional overclocker has managed to set a new DDR4 clock-rate record using hardware from MicroStar Interational, Kingston and Intel Corp. While overclocking results of contemporary DDR4 memory modules are impressive, when it comes to actual frequency, they are considerably behind DDR3 memory solutions. Toppc, one of the world’s …